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| FPNH10 FPNH10 C BE TO-92 NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 A to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25C unless otherwise noted Parameter Value 25 30 3.0 50 -55 to +150 Units V V V mA C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJC RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max FPNH10 350 2.8 125 357 Units mW mW/C C/W C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 2000 Fairchild Semiconductor Corporation FPNH10 Rev. A FPNH10 NPN RF Transistor (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Sustaining Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current IC = 1.0 mA, IB = 0 IC = 100 A, IE = 0 IE = 10 A, IC = 0 VCB = 25 V, IE = 0 VEB = 2.0 V, IC = 0 25 30 3.0 100 100 V V V nA nA ON CHARACTERISTICS hFE VCE(sat) VBE(on) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage IC = 4.0 mA, VCE = 10 V IC = 4.0 mA, IB = 0.4 mA IC = 4.0 mA, VCE = 10 V 60 0.5 0.95 V V SMALL SIGNAL CHARACTERISTICS fT C cb C rb rb'C c Current Gain - Bandwidth Product Collector-Base Capacitance Common-Base Feedback Capacitance Collector Base Time Constant IC = 4.0 mA, V CE = 10 V, f = 100 MHz V CB = 10 V, IE = 0, f = 1.0 MHz V CB = 10 V, IE = 0, f = 1.0 MHz IC = 4.0 mA, V CB = 10 V, f = 31.8 MHz 650 0.720 0.34 0.65 9.0 MHz pF pF ps *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% Spice Model NPN (Is=69.28E-18 Xti=3 Eg=1.11 Vaf=100 Bf=308.6 Ne=1.197 Ise=69.28E-18 Ikf=22.83m Xtb=1.5 Br=1.11 Nc=2 Isc=0 Ikr=0 Rc=4 Cjc=1.042p Mjc=.2468 Vjc=.75 Fc=.5 Cje=1.52p Mje=.3223 Vje=.75 Tr=1.558n Tf=135.8p Itf=.27 Vtf=10 Xtf=30 Rb=10) FPNH10 NPN RF Transistor (continued) Typical Characteristics VCESAT- COLLECTOR-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Typical Pulsed Current Gain vs Collector Current 100 Vce = 5V Collector-Emitter Saturation Voltage vs Collector Current 0.2 = 10 0.15 125 C 80 60 40 20 0 0.1 125 C 25 C 0.1 25 C - 40 C 0.05 - 40 C 0.2 0.5 1 2 5 10 20 I C - COLLECTOR CURRENT (mA) 50 0.1 1 10 I C - COLLECTOR CURRENT (mA) 20 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.1 VBE(ON) BASE-EMITTER ON VOLTAGE (V) - VBESAT- BASE-EMITTER VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current = 10 - 40 C 25 C Base-Emitter ON Voltage vs Collector Current 1 VCE = 5V 0.8 - 40 C 25 C 125 C 0.6 125 C 0.4 IC 1 10 - COLLECTOR CURRENT (mA) 20 0.2 0.01 0.1 1 10 I C - COLLECTOR CURRENT (mA) P 42 100 Collector-Cutoff Current vs Ambient Temperature ICBO- COLLECTOR CURRENT (nA) Po we r D iss ip ation vs. Amb ien t Tem pe ra ture P D - PO W ER DISS IPAT IO N (W ) 35 0 30 0 25 0 20 0 15 0 10 0 50 0 0 25 50 75 10 0 T A - T EMPE RATUR E ( o C) 12 5 15 0 10 VCB = 30V TO-9 2 1 0.1 25 50 75 100 125 T A - AMBIENT TEMPERATURE ( C) 150 FPNH10 NPN RF Transistor (continued) Common Base Y Parameters vs. Frequency Input Admittance Yib - INPUT ADMITTANCE (mmhos) 120 80 Yob - OUTPUT ADMITTANCE (mmhos) 12 10 8 6 Output Admittance VCE = 10V I C = 5 mA g ib 40 0 -40 -80 VCE = 10V I C = 5 mA b ob 4 2 0 100 b ib g ob 200 500 f - FREQUENCY (MHz) P 42 (BASE) -120 100 200 500 f - FREQUENCY (MHz) ( S) 1000 1000 Y fb - FORWARD ADMITTANCE (mmhos) Forward Transfer Admittance 120 Yrb - REVERSE ADMITTANCE (mmhos) 8 Reverse Transfer Admittance VCE = 10V b fb 80 40 0 6 I C = 5 mA 4 g fb -40 -80 -120 100 VCE = 10V I C = 5 mA -b rb 2 -g rb 0 100 200 500 f - FREQUENCY (MHz) 1000 200 500 f - FREQUENCY (MHz) 1000 FPNH10 NPN RF Transistor (continued) Common Emitter Y Parameters vs. Frequency Input Admittance Yoe - OUTPUT ADMITTANCE (mmhos) Y ie - INPUT ADMITTANCE (mmhos) 24 20 16 12 VCE = 10V I C = 2 mA Output Admittance 6 VCE = 10V g ie 5 4 I C = 2 mA b oe 3 2 1 b ie 8 4 0 100 g oe 0 100 200 500 f - FREQUENCY (MHz) P (EMITTER) 200 500 f - FREQUENCY (MHz) 1000 1000 Y fe - FORWARD ADMITTANCE (mmhos) Forward Transfer Admittance Yre - REVERSE ADMITTANCE (mmhos) 60 VCE = 10V Reverse Transfer Admittance 1.2 1 0.8 VCE = 10V I C = 2 mA 40 20 0 -20 -40 -60 100 g fe I C = 2 mA -b re 0.6 0.4 0.2 0 100 b fe 200 500 f - FREQUENCY (MHz) ( ) -g re 200 500 f - FREQUENCY (MHz) 1000 1000 FPNH10 NPN RF Transistor (continued) Test Circuits 2.0 K 10 K VCC = 12 V 1000 pF 1000 pF 0.8-10 pF 100 pF L2 2.0 pF T1 TUM 1000 pF Input 50 L1 5.0-18 pF 1000 pF 0.8-10 pF 1000 pF 680 L1 - L3 turns No. 16 wire, 1/2 inch L x 1/4 inch ID tapped 1 1/2 turns from cold side L2 - L6 turns No. 14 wire, 1 inch L x 1/4 inch ID tapped 1 1/2 turns from cold side T1 - Pri. 1 turn No. 16 wire Sec. 1 turn No. 18 wire VBB FIGURE 1: Neutralized 200 MHz pF and NF Circuit 50 pF (NOTE 2) 175 pF 500 mHz Output into 50 RFC (NOTE 1) NOTE 1: 2 turns No. 16 AWG wire, 3/8 inch OD, 1 1/4 inch long NOTE 2: 9 turns No. 22 AWG wire, 3/16 inch OD, 1/2 inch long 1000 pF 1000 pF 2.2 K RFC - Vee VCC FIGURE 2: 500 MHz Oscillator Circuit TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST DISCLAIMER FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G |
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